The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Nov. 30, 2016
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventors:
Paul Loscutoff, Castro Valley, CA (US);
Gabriel Harley, Mountain View, CA (US);
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/065 (2012.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 21/268 (2006.01); H01L 21/228 (2006.01); H01L 31/02 (2006.01); H01L 21/22 (2006.01); H01L 31/05 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/065 (2013.01); H01L 21/228 (2013.01); H01L 21/2225 (2013.01); H01L 21/268 (2013.01); H01L 31/02008 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/0516 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); Y02E 10/50 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.