The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Oct. 13, 2014
Applicant:

Nanoco Technologies Ltd., Manchester, GB;

Inventors:

Zugang Liu, Manchester, GB;

Christopher Newman, West Yorkshire, GB;

Assignee:

Nanoco Technologies Ltd., Manchester, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/00 (2006.01); H01L 31/032 (2006.01); C09D 11/52 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); C09D 11/52 (2013.01); Y02E 10/541 (2013.01);
Abstract

A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises: dissolving or dispersing Cu(In,Ga)Sand Cu(In,Ga)Senanoparticles; mixing the nanoparticle solutions/dispersions and adding oleic acid to form an ink; depositing the ink on a substrate; annealing to remove the organic components of the ink formulation; forming a film with a CFL ≧500 nm; and, repeating the deposition and annealing process to form a CIGS film having a thickness ≧1 μm. The film so produced may be incorporated into a thin film photovoltaic device.


Find Patent Forward Citations

Loading…