The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

May. 04, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Inventors:

Yuliang Wang, Beijing, CN;

Daeyoung Choi, Beijing, CN;

Zengli Liu, Beijing, CN;

Daojie Li, Beijing, CN;

Fei Al, Beijing, CN;

Jun Zhou, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/32134 (2013.01); H01L 29/458 (2013.01); H01L 29/66765 (2013.01); H01L 29/78669 (2013.01);
Abstract

The present disclosure provides a TFT, an array substrate, their manufacturing methods, and a display device. A source electrode and a drain electrode of the TFT are each of a multi-layered structure including a metal layer and a metal barrier layer. An a-Si active layer of the TFT is covered with an etch stop layer, via-holes penetrating through the etch stop layer are provided at positions corresponding to the source electrode and the drain, and the source electrode and the drain electrode are connected to the a-Si active layer through the via-holes.


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