The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Jun. 30, 2015
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Kuo-Lung Fang, Hsinchu, TW;
Yi-Chun Kao, Hsinchu, TW;
Hsin-Hua Lin, Hsinchu, TW;
Po-Li Shih, Hsinchu, TW;
Chih-Lung Lee, Hsinchu, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The etching stopping layer is formed on a surface of the channel layer. The channel layer and the etching stopping layer are formed in a same photo etching process.