The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Jun. 26, 2015
Applicant:
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Yi-Chun Kao, Hsinchu, TW;
Hsin-Hua Lin, Hsinchu, TW;
Chih-Lung Lee, Hsinchu, TW;
Kuo-Lung Fang, Hsinchu, TW;
Po-Li Shih, Hsinchu, TW;
Assignee:
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1335 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/78603 (2013.01); G02F 2001/134372 (2013.01); G02F 2001/136222 (2013.01);
Abstract
A thin film transistor (TFT) includes a substrate, a TFT formed on the substrate, and a passivation layer formed on the TFT. The TFT includes a gate, a source, a drain, and a channel layer. The source and the drain are respectively located at opposite sides of the channel layer. The channel layer includes oxygen ions which are implanted into the channel layer by an oxygen implanting process performed in an environment having an air pressure greater than a standard atmospheric pressure.