The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Sep. 23, 2016
Applicant:
Fairchild Semiconductor Corporation, Sunnyvale, CA (US);
Inventor:
Andrei Konstantinov, Sollentuna, SE;
Assignee:
Fairchild Semiconductor Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7803 (2013.01); H01L 21/046 (2013.01); H01L 21/047 (2013.01); H01L 21/049 (2013.01); H01L 21/0455 (2013.01); H01L 21/0465 (2013.01); H01L 29/0611 (2013.01); H01L 29/0638 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 29/8083 (2013.01);
Abstract
In a general aspect, an apparatus can include a silicon carbide (SiC) trench gate MOSFET with improved operation due, at least in part, to a reduced gate capacitance. In the SiC trench gate MOSFET, a thick gate oxide can be formed on a bottom surface of the gate trench and a built-in channel, having a vertical portion and a lateral portion, can be formed to electrically connect a vertical inversion-layer channel, such as in a channel stopper layer, to a vertical JFET channel region and a drift region.