The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Nov. 12, 2015
Applicant:

U.s. Army Research Laboratory, Washington, DC (US);

Inventor:

Pankaj B Shah, Rockville, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02521 (2013.01); H01L 21/02532 (2013.01); H01L 21/02568 (2013.01); H01L 21/02631 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract

Embodiments of the present invention are directed to semiconductor electronic devices formed of 2-D van der Waals material whose free charge carrier concentration is determined by adjacent semiconductor's polarization. According to one particular embodiment, a semiconductor electronic device is composed of one or more layers of two dimensional (2-D) van der Waals (VDW) material; and one or more layers of polarized semiconductor material adjacent to the one or more layer of 2-D VDW material. The polarization of the adjacent semiconductor material establishes the free carrier charge concentration of the 2-D VDW material.


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