The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Feb. 13, 2014
Applicant:

Cmosis Bvba, Antwerp, BE;

Inventors:

Guy Meynants, Retie, BE;

Koen Van Wichelen, Heverlee, BE;

Assignee:

CMOSIS BVBA, Antwerp, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14887 (2013.01); H01L 27/1463 (2013.01); H01L 27/14616 (2013.01); H01L 27/14623 (2013.01);
Abstract

A pixel structure comprises an epitaxial layer () of a first conductivity type. A photo-sensitive element comprises a first region (4) of a second conductivity type and a second region (3) of the first conductivity type positioned between the epitaxial layer () and the first region (4). A charge storage node (ø2) is arranged to store charges acquired by the photo-sensitive element, or to form part of a charge storage element. A third region (2) of the second conductivity type is positioned between the charge storage node and the epitaxial layer. The pixel structure further comprises a charge-to-voltage conversion element () for converting charges from the charge storage node to a voltage signal and an output circuit () for selectively outputting the voltage signal from the pixel structure.


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