The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Nov. 16, 2016
Globalfoundries Inc., Grand Cayman, KY;
Kasun Anupama Gardiye Punchihewa, Ballston Lake, NY (US);
Deepal Wehella-Gamage, Newburgh, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of forming a contact to mitigate punch through in SOI substrates is disclosed. The method may include providing an active region in SOI substrate isolated from another region in the SOI substrate by a shallow trench isolation (STI), the active region having a silicided source/drain region adjacent the STI. A spacer may be formed at an edge of the silicided source/drain region adjacent to the STI. A contact etch stop layer (CESL) may be deposited over the spacer and a dielectric layer over the CESL. A contact opening may be formed to the source/drain region through the CESL and the dielectric layer. A portion of the contact opening is positioned over the spacer such that the spacer prevents punch through into the STI. A contact may then be formed in the contact opening.