The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Apr. 28, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jae-Hyun Yoo, Suwon-si, KR;
Kee-Moon Chun, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si Gyeonggi-do, KR;
Abstract
A semiconductor device including an electrostatic discharge (ESD) protection circuit includes an input port, a logic circuit receiving an input signal applied to the input port and generating an output signal based on the input signal, and an ESD protection circuit adjusting a level of the input signal when the level of the input signal exceeds a predetermined range. The ESD protection circuit includes a first fin and a second fin arranged on a semiconductor substrate in parallel, and a gate electrode formed in a direction crossing the first fin and the second fin, each of the first fin and the second fin includes a source region, a drain region, and a channel region disposed between the source region and the drain region, the channel region is disposed under the gate electrode, a source region of the first fin and a drain region of the second fin are disposed at a first side of the gate electrode, and a drain region of the first fin and a source region of the second fin are disposed at a second side of the gate electrode.