The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jun. 19, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Kriteshwar K. Kohli, Fishkill, NY (US);

Sean M. Polvino, Queens, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 35/00 (2006.01); H01L 21/66 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/845 (2013.01); H01L 22/30 (2013.01); H01L 29/66795 (2013.01);
Abstract

A semiconductor device or article includes a substrate including a feature and divided into a feature region in which the feature is formed and a pad region in which the substrate is substantially unmodified, and a layer of interest applied over the substrate and feature. The pad and feature regions are irradiated and resulting photoelectron intensities are recorded and used to determine a thickness of the layer of interest over the feature. In addition, if the layer of interest includes an atomic species distinct from any in the substrate, an actual dose of the atomic species can be determined.


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