The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Dec. 22, 2015
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Hendrik F. W. Dekkers, Tienen, BE;

Lars-Ake Ragnarsson, Leuven, BE;

Tom Schram, Rixensart, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/823842 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66795 (2013.01);
Abstract

The disclosed technology generally relates to integrated circuit devices and methods of forming the same, and more particularly to metal electrodes whose effective work function can be tuned. In one aspect, a method of forming a metal electrode of a semiconductor structure includes providing a semiconductor substrate having at least a region covered with a dielectric. The semiconductor substrate is introduced into a chamber configured for atomic layer deposition (ALD). A metal for the metal electrode is deposited at least on the dielectric by performing an ALD cycle. Performing the ALD cycle includes pulsing a Ti-containing precursor gas followed by pulsing a Ta-containing precursor gas, and further includes pulsing NHgas.


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