The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Jul. 05, 2013
Altera Corporation, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Peter Smeys, San Jose, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
A method of fabricating an integrated circuit includes forming a plurality of polysilicon gate electrode structures over a plurality of fin-shaped channel structures. A portion of the plurality of polysilicon gate electrode structures may then be removed to expose a surface region of a fin-shaped channel structure in the plurality of fin-shaped channel structures. The remaining portion of the polysilicon gate electrode structures may form a plurality of polysilicon transistors. A layer of high-k dielectric material is deposited on the exposed surface region of the fin-shaped channel structure. A metal layer may be deposited over the high-k dielectric material to form at least one high-k metal gate transistor over the fin-shaped channel structure.