The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

May. 04, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jonghoon Baek, San Jose, CA (US);

Soonam Park, Sunnyvale, CA (US);

Xinglong Chen, San Jose, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); H05H 1/24 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); H01J 37/3255 (2013.01); H01J 37/32568 (2013.01); H01J 2237/334 (2013.01);
Abstract

Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a first electrode and a second electrode of the processing chamber by applying a radio frequency (RF) power to the first electrode during an etch process, wherein the first electrode is disposed above the second electrode, and the second electrode is disposed above and opposing a substrate support having a substrate supporting surface, and applying a constant zero DC bias voltage to the first electrode during the process.


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