The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Aug. 08, 2016
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 11/15 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0038 (2013.01); G11C 11/15 (2013.01); G11C 2013/0042 (2013.01); G11C 2013/0054 (2013.01); H01L 43/08 (2013.01);
Abstract
An electronic device including a semiconductor memory. The semiconductor memory includes a bit line; a source line; a plurality of resistive memory cells among which a selected memory cell forms a current path between the bit line and the source line; a read current supply unit configured to supply read current to the bit line in a read operation; a sense amplifier configured to generate read data in response to a voltage level of the bit line in the read operation; and a variable switch element configured to flow current from the source line to a ground terminal in the read operation, and be decreased in its resistance value as a voltage level of the source line is high.