The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Nov. 11, 2015
Applicant:

Crucialtec Co., Ltd., Gyeonggi-do, KR;

Inventors:

Byung Seong Bae, Gyeonggi-do, KR;

Ho Sik Jeon, Chungcheongnam-do, KR;

Woo Young Choi, Seoul, KR;

Jong Uk Kim, Gyeonggi-do, KR;

Jun Suk Lee, Gyeonggi-do, KR;

So Hyun Jeong, Chungcheongnam-do, KR;

Ju An Yoon, Chungcheongnam-do, KR;

Sang A Oh, Seoul, KR;

Assignee:

CRUCIALTEC CO., LTD., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/045 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); G06K 9/00 (2006.01); G06F 3/042 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0416 (2013.01); G06F 3/044 (2013.01); G06F 3/0412 (2013.01); G06F 3/0421 (2013.01); G06K 9/0002 (2013.01);
Abstract

A display apparatus capable of image scanning and a driving method thereof are provided. A display apparatus capable of image scanning includes a plurality of contact sensors each of which includes an N-type transistor, a P-type transistor connected to a gate electrode of the N-type transistor, and a sensing capacitor, the plurality of contact sensors being arranged so as not to cover a unit color pixel area of a color filter layer; a first scan line to which a selective signal is periodically applied, the first scan line being connected to a source electrode of the N-type transistor; a second scan line to which a selective signal is applied followed by the first scan line, the second scan line being connected to the gate electrode and source electrode of the P-type transistor; and a readout line connected to the drain electrode of the N-type transistor.


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