The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Aug. 26, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Eishi Shiobara, Yokkaichi, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/11 (2006.01); G03F 7/028 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 7/0045 (2013.01); G03F 7/028 (2013.01); G03F 7/11 (2013.01); G03F 7/2004 (2013.01); G03F 7/2059 (2013.01); G03F 7/32 (2013.01);
Abstract

According to one embodiment, a method of manufacturing a semiconductor device, includes forming an energy-ray-curable resin layer containing a sensitizer for increasing sensitivity to exposure light, on an underlayer region including a semiconductor substrate, irradiating the energy-ray-curable resin layer with energy rays to form a lower layer film containing the sensitizer, forming a resist film on the lower layer film, diffusing the sensitizer from the lower layer film into the resist film by thermal treatment, irradiating the resist film in which the sensitizer is diffused with exposure light, and developing the resist film irradiated with the exposure light.


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