The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Apr. 06, 2012
Applicant:

Shumin Wang, Shanghai, CN;

Inventor:

Shumin Wang, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/12 (2006.01); H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 25/06 (2006.01); C30B 29/68 (2006.01);
U.S. Cl.
CPC ...
C30B 19/12 (2013.01); C30B 23/025 (2013.01); C30B 25/06 (2013.01); C30B 25/183 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/02381 (2013.01); H01L 21/02395 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02546 (2013.01); H01L 21/02667 (2013.01); Y10T 428/12681 (2015.01); Y10T 428/2495 (2015.01); Y10T 428/31678 (2015.04);
Abstract

The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality.


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