The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Sep. 03, 2014
Applicant:
Dexerials Corporation, Tokyo, JP;
Inventors:
Assignee:
DEXERIALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 9/10 (2006.01); C30B 19/04 (2006.01); C30B 9/00 (2006.01); C30B 9/06 (2006.01); C30B 29/40 (2006.01); C01B 21/06 (2006.01); C30B 17/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 19/04 (2013.01); C01B 21/0632 (2013.01); C30B 9/00 (2013.01); C30B 9/06 (2013.01); C30B 17/00 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02628 (2013.01); C01P 2002/72 (2013.01); C01P 2004/03 (2013.01); C01P 2004/61 (2013.01);
Abstract
[Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure. [Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.
Watanabe, Makoto. (2018). Method for producing gallium nitride crystal by reacting metal gallium and iron nitride (U.S. Patent No. 9890471). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9890471
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile