The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Apr. 29, 2015
Applicant:
Seagate Technology Llc, Cupertino, CA (US);
Inventors:
Qing He, Plymouth, MN (US);
Jae Young Yi, Prior Lake, MN (US);
Eric W. Singleton, Maple Plain, MN (US);
Assignee:
SEAGATE TECHNOLOGY LLC, Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/08 (2006.01); G11B 5/39 (2006.01); C23C 28/00 (2006.01); C23C 14/56 (2006.01); C23C 14/58 (2006.01); G11B 5/31 (2006.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
C23C 14/081 (2013.01); C23C 14/568 (2013.01); C23C 14/5806 (2013.01); C23C 28/32 (2013.01); C23C 28/322 (2013.01); C23C 28/345 (2013.01); G11B 5/3909 (2013.01); B82Y 25/00 (2013.01); G11B 5/3163 (2013.01);
Abstract
A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.