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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9890438 B1

PDFFull Text
Date of Patent:
Feb. 13, 2018

Filed:

Jan. 08, 2016

Aluminum copper clad material

Applicant:

Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;

Inventors:

Yoshimitsu Oda, Suita, JP;

Masaaki Ishio, Osaka, JP;

Akio Hashimoto, Nerima-ku, JP;

Kenji Ikeuchi, Kyoto, JP;

Assignee:

Hitachi Metals, Ltd., Tokyo, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Devang R Patel

Int. Cl.
CPC ...
B23K 20/02 (2006.01); C21D 9/00 (2006.01); C22C 9/00 (2006.01); C22C 21/00 (2006.01); B32B 15/00 (2006.01); B32B 15/01 (2006.01); C21D 1/26 (2006.01); C22C 9/04 (2006.01); C22C 21/08 (2006.01); C22C 21/10 (2006.01); C22C 21/14 (2006.01); C22C 21/16 (2006.01); C22C 21/18 (2006.01); C22F 1/04 (2006.01); C22F 1/047 (2006.01); C22F 1/053 (2006.01); C22F 1/057 (2006.01); C22F 1/08 (2006.01);
U.S. Cl.
CPC ...
C21D 9/0068 (2013.01); B23K 20/02 (2013.01); B32B 15/017 (2013.01); C21D 1/26 (2013.01); C22C 9/00 (2013.01); C22C 9/04 (2013.01); C22C 21/00 (2013.01); C22C 21/08 (2013.01); C22C 21/10 (2013.01); C22C 21/14 (2013.01); C22C 21/16 (2013.01); C22C 21/18 (2013.01); C22F 1/04 (2013.01); C22F 1/047 (2013.01); C22F 1/053 (2013.01); C22F 1/057 (2013.01); C22F 1/08 (2013.01); Y10T 428/1275 (2015.01);
Abstract

An aluminum copper clad material has excellent bonding strength and includes an aluminum layer and a copper layer that are bonded without a nickel layer interposed therebetween. The aluminum layer and the copper layer are diffusion-bonded via an Al—Cu intermetallic compound layer. The copper layer satisfies Dcs≦0.5×Dcc, where Dcc represents the average crystal grain size of crystal grains in a central portion in the thickness direction of the copper layer, and Dcs represents the average crystal grain size of an interface adjacent portion Cin the copper layer that is about 0.5 μm apart from the interface between the copper layer and the intermetallic compound layer. The intermetallic compound layer has an average thickness of about 0.5 μm to about 10 μm.

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