The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Apr. 07, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeongggi-do, KR;
Inventors:
Wenhao Liu, Billerica, MA (US);
Peter M. Allen, Parsons, KS (US);
Annie Cho Won, Somerville, MA (US);
Zhiming Wang, Port Lavaca, TX (US);
Craig A. Breen, Somerville, MA (US);
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); C09K 11/88 (2006.01); C09D 11/52 (2014.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/26 (2010.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); C09D 11/52 (2013.01); C09K 11/025 (2013.01); C09K 11/565 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/26 (2013.01);
Abstract
A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100° C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrystals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed.