The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Apr. 21, 2015
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Jeffery Beck, Corvallis, OR (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01L 27/00 (2006.01); H04N 5/355 (2011.01); H04N 5/243 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3559 (2013.01); H04N 5/243 (2013.01);
Abstract

An image sensor may include an array of pixels arranged in rows and columns. Each pixel may include a floating diffusion node, a capacitor, a dual conversion gain (DCG) transistor having a gate terminal coupled to the floating diffusion, a source terminal, and a drain terminal coupled to the floating diffusion through the capacitor. Column readout circuitry may provide per-column control signals to the source terminal of the DCG transistor in the pixels of a selected row to place the pixels into a low conversion gain mode by turning the DCG transistor on and into a high conversion gain mode by turning the DCG transistor off. In this way, the readout circuitry may provide per-column conversion gains for each row without boosting DCG control signals to magnitudes greater than the pixel supply voltage, thereby reducing voltage stress on the pixel array and improving lifetime of the image sensor.


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