The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jun. 06, 2016
Qualcomm Incorporated, San Diego, CA (US);
Amir Hossein Masnadi Shirazi Nejad, Vancouver, CA;
Mazhareddin Taghivand, Campbell, CA (US);
Seyed Hossein Miri Lavasani, Santa Clara, CA (US);
Mohammad Emadi, San Jose, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A linear low noise amplifier is disclosed. In at least one exemplary embodiment, the linear low noise amplifier may include a first metal oxide semiconductor field effect transistor (MOSFET) configured to operate in a triode mode coupled to a second MOSFET configured to operate in a saturation mode. Linearity of the low noise amplifier may be determined, at least in part, by a transconductance associated with the second MOSFET and a channel resistance associated the first MOSFET.