The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Jul. 01, 2014
Applicant:

The Uab Research Foundation, Birmingham, AL (US);

Inventors:

Sergey B. Mirov, Vestavia Hills, AL (US);

Vladimir V. Fedorov, Birmingham, AL (US);

Assignee:

The UAB Research Foundation, Birmingham, AL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/08 (2006.01); C30B 31/00 (2006.01); C30B 31/02 (2006.01); H01S 3/06 (2006.01); H01S 3/0941 (2006.01); H01S 3/1055 (2006.01); H01S 3/16 (2006.01); H01S 3/108 (2006.01); H01S 3/115 (2006.01); H01S 3/117 (2006.01); H01S 3/00 (2006.01); H01S 3/094 (2006.01); H01S 3/113 (2006.01);
U.S. Cl.
CPC ...
H01S 3/0805 (2013.01); C30B 31/00 (2013.01); C30B 31/02 (2013.01); H01S 3/0604 (2013.01); H01S 3/0627 (2013.01); H01S 3/08009 (2013.01); H01S 3/08086 (2013.01); H01S 3/09415 (2013.01); H01S 3/094042 (2013.01); H01S 3/094046 (2013.01); H01S 3/108 (2013.01); H01S 3/1055 (2013.01); H01S 3/115 (2013.01); H01S 3/117 (2013.01); H01S 3/162 (2013.01); H01S 3/1623 (2013.01); H01S 3/0014 (2013.01); H01S 3/094038 (2013.01); H01S 3/113 (2013.01); H01S 3/1628 (2013.01); H01S 2301/04 (2013.01); Y10S 438/917 (2013.01);
Abstract

A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Crthin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.


Find Patent Forward Citations

Mirov, Sergey. (2018). Mid-ir microchip laser: zns:cr2+ laser with saturable absorber material (U.S. Patent No. 9887510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9887510

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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