The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Sep. 08, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Ji Youl Lee, Seoul, KR;

Joo Young Kim, Hwaseong-si, KR;

Jong Won Chung, Hwaseong-si, KR;

Sang Yoon Lee, Seoul, KR;

Jeong Il Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0545 (2013.01); H01L 51/0007 (2013.01); H01L 51/0018 (2013.01); H01L 51/0558 (2013.01); H01L 51/0017 (2013.01); H01L 51/0074 (2013.01);
Abstract

A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.


Find Patent Forward Citations

Loading…