The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Oct. 13, 2016
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Wan-Gee Kim, Icheon, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/124 (2013.01); H01L 27/2472 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); H01L 45/1641 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/122 (2013.01);
Abstract
An electronic device includes a semiconductor memory that includes: a first conductive pattern disposed over a substrate; a first selection element layer disposed over the first conductive pattern and having one or more first grooves therein, the first grooves overlapping the first conductive pattern; a first variable resistance layer whose sidewalls and bottom are surrounded by the first selection element layer, the first variable resistance layer being buried in the first groove; and a second conductive pattern that overlaps the first variable resistance layer and is disposed over the first variable resistance layer.