The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Dec. 18, 2015
The Board of Regents of the University of Oklahoma, Norman, OK (US);
The Board of Regents of the University of Okalahoma, Norman, OK (US);
Abstract
Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.