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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887303 B1

PDFFull Text
Date of Patent:
Feb. 06, 2018

Filed:

Dec. 16, 2015

Semiconductor device including two-dimensional material, and method of manufacturing the semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jinseong Heo, Seoul, KR;

Kiyoung Lee, Seoul, KR;

Sangyeob Lee, Hwaseong-si, KR;

Eunkyu Lee, Yongin-si, KR;

Jaeho Lee, Seoul, KR;

Seongjun Park, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/032 (2006.01); H01L 29/16 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); H01L 29/12 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); H01L 27/1446 (2013.01); H01L 29/127 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/66977 (2013.01); H01L 29/786 (2013.01); H01L 31/022408 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); H01L 31/035209 (2013.01); H01L 31/035218 (2013.01); H01L 31/035227 (2013.01); H01L 31/035281 (2013.01); H01L 31/1884 (2013.01); Y02E 10/50 (2013.01);
Abstract

Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

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