The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Apr. 21, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Shinsuke Watanabe, Tokyo, JP;
Koichiro Nishizawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
According to the present invention, a semiconductor device includes a transistor provided in a first substrate, a gate pad of the transistor, a conductive bump provided on the gate pad, a second substrate provided above the first substrate, a first electrode passing through from a first face to a second face of the second substrate and connected with the conductive bump on the second face side, a resistor connected to the first face side of the first electrode with its one end and connected to an input terminal with the other end and a second electrode provided adjacent to the first electrode on the first face and connected to the input terminal without interposing the resistor, wherein a gate leakage current of the transistor flows from the first electrode to the input terminal through a base material of the second substrate and the second electrode.