The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Aug. 27, 2015
Toshiba Memory Corporation, Minato-ku, JP;
Yoshihiro Minami, Yokkaichi, JP;
Jun Iijima, Yokkaichi, JP;
Tetsuya Shimizu, Yokkaichi, JP;
Takamasa Usui, Yokkaichi, JP;
Masayoshi Tagami, Kuwana, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
A semiconductor device includes a semiconductor layer and a first insulating film provided on the semiconductor layer. The first insulating film has a surface opposite to the semiconductor layer, the surface including a first portion, a second portion and a third portion between the first portion and the second portion. The device includes a first interconnection provided on a first portion and a second interconnection provided on the second portion. The first interconnection and the second interconnection extend in a first direction. The device further includes a conductor and a nitride layer. The conductor extends through the first insulating film in a second direction from each of the first interconnection and the second interconnection toward the semiconductor layer, and the conductor electrically connects the first interconnection to the semiconductor layer. The nitrided layer is provided at least on the third surface.