The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Mar. 09, 2016
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Shintaro Sakai, Seoul, KR;
Keisuke Nakatsuka, Seoul, KR;
Hiroyuki Kanaya, Seoul, KR;
Yoshinori Kumura, Seoul, KR;
Katsuyuki Fujita, Nishitokyo Tokyo, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to an embodiment, a magnetic storage device includes a semiconductor region including a trench; a gate electrode disposed in the trench; an insulation film covering the gate electrode and provided in a manner to fill the trench; and a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the non-magnetic layer in a side surface of the magnetoresistive effect element including the non-magnetic layer being provided on a top surface of the insulation film.