The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jun. 23, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Tatsuo Kasaoka, Kanagawa, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
Disclosed are a semiconductor device and a method for manufacturing the semiconductor device that is capable of adequately reducing the influence of inter-wiring capacitance even when a photoelectric conversion element is progressively miniaturized. A plurality of transfer transistors each include a photoelectric conversion element and a signal output section. A plurality of other transistors include at least one signal input/output section that is electrically coupled to the transfer transistors. An interlayer insulating film is formed so as to cover the transfer transistors and the other transistors. A total of at least three of at least one signal output section of the transfer transistors and at least one signal input/output section of the other transistors are coupled by a coupling layer that includes a conductor filled into a groove formed in the interlayer insulating film.