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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887217 B1

PDFFull Text
Date of Patent:
Feb. 06, 2018

Filed:

Sep. 17, 2015

Pixels of image sensors, image sensors including the pixels, and image processing systems including the image sensors

Applicants:

Jung Chak Ahn, Yongin-si, KR;

Seung Joo Nah, Gwangju, KR;

Kyung Ho Lee, Suwon-si, KR;

Young Woo Jung, Yongin-si, KR;

Inventors:

Jung Chak Ahn, Yongin-si, KR;

Seung Joo Nah, Gwangju, KR;

Kyung Ho Lee, Suwon-si, KR;

Young Woo Jung, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Thanh Luu

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/146 (2006.01); H04N 5/353 (2011.01); H04N 5/355 (2011.01); H04N 5/359 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14614 (2013.01); H01L 27/14623 (2013.01); H01L 27/14638 (2013.01); H01L 27/14645 (2013.01); H04N 5/353 (2013.01); H04N 5/3559 (2013.01); H04N 5/3592 (2013.01); H04N 5/37452 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract

Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.

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