The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
May. 10, 2016
Applicants:
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1285 (2013.01); H01L 29/458 (2013.01); H01L 29/6675 (2013.01);
Abstract
The present disclosure provides a poly-silicon TFT, its manufacturing method, an array substrate and its manufacturing method. The method for manufacturing the poly-silicon TFT includes a step of, subsequent to the formation of an amorphous-silicon active layer and a source electrode of the TFT, applying an electrical signal to the source electrode, so as to maintain the source electrode at a predetermined temperature for a predetermined time period, thereby to crystallize the amorphous active layer into a poly-silicon active layer due to heat generated by the source electrode and transferred to the amorphous active layer.