The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Aug. 17, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taejoong Song, Seongnam-si, KR;

Ha-Young Kim, Seoul, KR;

Jung-Ho Do, Yongin-si, KR;

Sanghoon Baek, Seoul, KR;

Jinyoung Lim, Seoul, KR;

Kwangok Jeong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/118 (2006.01); G06F 17/50 (2006.01); G03F 1/36 (2012.01); H01L 21/8238 (2006.01); H01L 21/66 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); G03F 1/36 (2013.01); G06F 17/505 (2013.01); G06F 17/5045 (2013.01); G06F 17/5077 (2013.01); G06F 17/5081 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 22/20 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 2027/11831 (2013.01); H01L 2027/11881 (2013.01);
Abstract

A semiconductor device includes a substrate including a first active region and a second active region, the first active region having a conductivity type that is different than a conductivity type of the second active region, and the first active region being spaced apart from the second active region in a first direction, gate electrodes extending in the first direction, the gate electrodes intersecting the first active region and the second active region, a first shallow isolation pattern disposed in an upper portion of the first active region, the first shallow isolation pattern extending in the first direction, and a deep isolation pattern disposed in an upper portion of the second active region, the deep isolation pattern extending in the first direction, and the deep isolation pattern dividing the second active region into a first region and a second region.


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