The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
May. 15, 2014
Qualcomm Incorporated, San Diego, CA (US);
Mukul Gupta, San Diego, CA (US);
Xiangdong Chen, Irvine, CA (US);
Ohsang Kwon, San Diego, CA (US);
Foua Vang, Lemon Grove, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Kern Rim, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A standard cell CMOS device includes metal oxide semiconductor transistors having gates formed from gate interconnects. The gate interconnects extend in a first direction. The device further includes power rails that provide power to the transistors. The power rails extend in a second direction orthogonal to the first direction. The device further includes M1 layer interconnects extending between the power rails. At least one of the M1 layer interconnects is coupled to at least one of the transistors. The M1 layer interconnects are parallel to the gate interconnects and extend in the first direction only.