The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Aug. 29, 2016
Applicant:

Kilopass Technology, Inc., San Jose, CA (US);

Inventor:

Harry Shengwen Luan, Saratoga, CA (US);

Assignee:

Kilopass Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 21/28 (2006.01); G11C 17/16 (2006.01); H01L 23/525 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/16 (2013.01); H01L 21/28008 (2013.01); H01L 23/5252 (2013.01); H01L 29/66477 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate. Among others, features include forming the gate lines with polysilicon layers of one conductivity type and the intersecting lines with dopants of the opposite conductivity type in the substrate; forming the intersecting lines with differing dopant concentrations near the substrate surface and deeper in the substrate; and forming the widths of the gate lines and intersecting lines with the minimum feature size that can be patterned by a particular semiconductor technology.


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