The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jun. 08, 2016
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventor:
Satoru Kameyama, Toyota, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-Shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/268 (2013.01); H01L 21/26513 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/6609 (2013.01); H01L 29/66333 (2013.01); H01L 29/66348 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. In the semiconductor device, the diode region includes a second conductivity type cathode layer. An impurity concentration of second conductivity type impurities of the cathode layer is distributed in a curve pattern having at least two peaks, and the impurity concentration of the second conductivity type impurities is higher than that of first conductivity type impurities at all depths of the cathode layer.