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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887187 B1

PDFFull Text
Date of Patent:
Feb. 06, 2018

Filed:

Mar. 25, 2016

Semiconductor device for preventing field inversion

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Shusaku Fujie, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Daniel Whalen

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 23/482 (2006.01); H01L 21/761 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0251 (2013.01); H01L 21/761 (2013.01); H01L 23/4824 (2013.01); H01L 27/0883 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/7816 (2013.01); H01L 29/7817 (2013.01); H01L 29/7823 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01); H01L 29/42368 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor layer having an element formation region in which a semiconductor element is formed. An element isolation well is formed in a surface portion of the semiconductor layer to isolate the element formation region. A field insulating film is formed on a surface of the semiconductor layer. The field insulating film surrounds the element formation region in an annular shape when viewed from a top. An interlayer insulating film is formed on the semiconductor layer. A wiring is formed on the interlayer insulating film. A conductive film is formed on the field insulating film.

Find Patent Forward Citations

Fujie, Shusaku. (2018). Semiconductor device for preventing field inversion (U.S. Patent No. 9887187). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9887187

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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