The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Sep. 27, 2012
Panasonic Corporation, Kadoma-shi, Osaka, JP;
Takayuki Yamada, Toyama, JP;
Hideyuki Arai, Toyama, JP;
Abstract
A semiconductor device includes first and second MIS transistors and a dummy element. The first MIS transistor includes a first gate insulating film which includes a first high-k insulating film formed on a first active region and contains an adjusting metal. The second MIS transistor includes a second gate insulating film which includes a second high-k insulating film formed on a second active region and is free of the adjusting metal. The dummy element includes a dummy gate insulating film which includes a dummy high-k insulating film formed on a dummy active region and at least a portion of which is free of the adjusting metal. The first active region is formed in a second conductivity type first well region. The second active region is formed in a first conductivity type second well region. The dummy active region is formed in a second conductivity type third well region.