The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Sep. 08, 2015
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Katsunori Yahashi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 21/8247 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/265 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01);
Abstract

According to one embodiment, a method is disclosed for manufacturing an integrated circuit device, the method can include forming a mask member on a first film, the mask member having a pattern, performing a first etching on the first film using the mask member as a mask to form a recessed section in the first film, forming a second film covering an inner side surface of the recessed section. The second film has a film thickness of preventing blockage of the recessed section, and performing a second etching on the second film and the first film via the recessed section. The performing of the second etching includes performing a third etching in a condition of an etching rate at a place smaller in curvature radius in the recessed section being lower than an etching rate at a place larger in curvature radius in the recessed section.


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