The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Oct. 06, 2016
Applicant:

City Labs, Inc., Homestead, FL (US);

Inventors:

Peter Cabauy, Miami, FL (US);

Larry C Olsen, Kennewick, WA (US);

Noren Pan, Wilmette, IL (US);

Assignee:

City Labs, Inc., Homestead, FL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G21H 1/06 (2006.01); H01L 31/115 (2006.01);
U.S. Cl.
CPC ...
G21H 1/06 (2013.01); H01L 31/115 (2013.01);
Abstract

A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.


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