The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Mar. 09, 2015
Applicant:

Futurewei Technologies, Inc., Plano, TX (US);

Inventors:

Xiaobing Lee, Santa Clara, CA (US);

Yansong Wang, Hangzhou, CN;

Ting Li, Hangzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/16 (2006.01); G11C 14/00 (2006.01); G06F 13/38 (2006.01); G06F 13/40 (2006.01); H04L 29/08 (2006.01); G06F 12/02 (2006.01); G06F 12/0868 (2016.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0045 (2013.01); G06F 12/0246 (2013.01); G06F 12/0868 (2013.01); G06F 13/382 (2013.01); G06F 13/4009 (2013.01); G11C 14/0018 (2013.01); H04L 67/1097 (2013.01); G06F 2212/1024 (2013.01); G06F 2212/174 (2013.01); G06F 2212/263 (2013.01); G06F 2212/7208 (2013.01); G11C 13/0002 (2013.01);
Abstract

As a solution to the type of problems noted above, this disclosure provides novel methods and systems that include dual-port solid-state drive (SSD) DIMM devices to provide primary storage capabilities with very low latency and better availability of DDR4 devices. The dual-port DDR4-SSD flash memory devices guarantee primary storage devices still accessible with one CPU or network failure. The novel DDR4 memory bus devices may be used not only for memory media and storage device buffers, but also to allow two CPUs to share data stored in flash SSD chips and to greatly improve DDR4 bus efficiency and bus utilizations by block accesses and eliminate PCIE-DMA data transfers. Through the features of the claimed subject matter described herein, dual-port DDR4-DIMM memory devices can be achieved that provide an All-Flash-Array storage system with substantially higher reliability, availability, and performance over conventional SATA/SAS-SSD, PCIE-SSD, and NVME-SSD solutions.


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