The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Dec. 16, 2016
Industrial Technology Research Institute, Hsinchu, TW;
Chia-Chen Kuo, Hualien County, TW;
Shyh-Shyuan Sheu, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A variable-resistance memory and a writing method thereof are provided. The variable-resistance memory includes a variable-resistance memory cell, a voltage-signal-generation circuit, a switch circuit, a detection circuit, and a controller. The variable-resistance memory cell includes a variable-resistance component and a transistor. The voltage-signal-generation circuit is coupled to the control terminal of the transistor. The switch circuit is coupled to the variable-resistance component and transistor. The detection circuit is coupled to a voltage source and the switch circuit. The controller is coupled to the voltage-signal-generation circuit, switch circuit, and detection circuit. When the controller performs a writing operation on the variable-resistance memory cell, the voltage-signal-generation circuit provides a voltage signal to the transistor, and the detection circuit continuously detects whether the variable-resistance component performs a resistance conversion. If the resistance conversion occurs, then the controller stops the writing operation.