The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Aug. 03, 2015
Ki Jin Han, Uslan, KR;
Madhavan Swaminathan, Marietta, GA (US);
Ki Jin Han, Uslan, KR;
Madhavan Swaminathan, Marietta, GA (US);
E-System Design, Inc., Savannah, GA (US);
Abstract
In a method for modeling electromagnetic effects in a planar circuit that employs a plurality of through-silicon vias in a domain, a region around each through-silicon via is described in terms of a cylindrical accumulation mode basis function. The cylindrical accumulation mode basis function is incorporated into an equivalent circuit that describes selected electrical characteristics of each through-silicon via. A plurality of localized intervals around each through-silicon via is selected. A multilayer Green's function is approximated for I(wherein M and N identify selected layers and wherein zz' designates layer boundaries in a layer through which the through-silicon via passes) in each localized interval without approximating the Green's function over the entire domain. Coefficients Iare approximated over a predetermined range of frequencies (ω). Admittance parameters based on of Iare calculated over a frequency sweep.