The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jun. 12, 2017
Zhengbiao Ouyang, Shenzhen, Guangdong Province, CN;
Zhengbiao Ouyang, Shenzhen, CN;
Guohua Wen, Shenzhen, CN;
Other;
Abstract
The present invention discloses a TEOS based on slab PhCs with a high DOP and large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is a first square-lattice slab PhC with a TM bandgap and a complete bandgap, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square lattice slab PhC with a TM bandgap and complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and an normalized operating frequency of the TEOS is 0.453 to 0.458.