The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Jan. 09, 2017
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Fan-Gang Tseng, Taipei, TW;

Chin Pan, Taipei, TW;

Hsueh-Sheng Wang, Taichung, TW;

Shih-Yi Fu, Hsinchu County, TW;

Miao-Hua Tu, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 19/00 (2006.01); H01M 8/0612 (2016.01);
U.S. Cl.
CPC ...
B01J 19/0093 (2013.01); H01M 8/0618 (2013.01); B01J 2219/0086 (2013.01); B01J 2219/00783 (2013.01); B01J 2219/00835 (2013.01); B01J 2219/00873 (2013.01); B01J 2219/00891 (2013.01);
Abstract

A hydrogen-generating device is provided, wherein a first substrate includes a liquid container and a first gas container at a first side thereof, and the first substrate sequentially includes a first and second liquid diffusion area and a diverging channel area from the liquid container to the first gas container. The first and second liquid diffusion areas respectively have a plurality of liquid diffusion structures, and the diverging channel area has a plurality of diverging channels. A laminate covers the first side of the first substrate and includes a liquid feed inlet connected to the liquid container. The first side of a second substrate covers the second side of the first substrate and includes a second gas container and a gas reaction channel located at the first side. A catalyst is disposed in the gas reaction channel and a heater is disposed on the second side of the second substrate.


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