The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Apr. 07, 2015
Applicant:

Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;

Inventors:

Yukinobu Sugiyama, Hamamatsu, JP;

Kenta Endo, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/355 (2011.01); H04N 5/341 (2011.01); H04N 5/353 (2011.01); H04N 5/374 (2011.01); H04N 5/376 (2011.01); H04N 5/347 (2011.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/355 (2013.01); H04N 5/341 (2013.01); H04N 5/347 (2013.01); H04N 5/353 (2013.01); H04N 5/374 (2013.01); H04N 5/376 (2013.01); H04N 5/378 (2013.01); H04N 5/3745 (2013.01);
Abstract

A solid-state imaging device includes a photodetecting unit, a row control unit, a column control unit, and a signal readout unit. The photodetecting unit includes M×N pixel units P() to P(M,N) two-dimensionally arrayed in M rows and N columns. Each pixel unit P(m,n) includes a photodiode PD, an amplifying transistor Tr, a transfer transistor Tr, a readout transistor Tr, a first initialization transistor Tr, and a second initialization transistor Tr. One of the transfer transistor Trand the first initialization transistor Trperforms an on/off operation based on a control signal output from the row control unit, and the other performs an on/off operation based on a control signal output from the column control unit.


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