The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Feb. 23, 2016
Analog Devices Global, Hamilton, BM;
Ahmed Mohammad Ashry Othman, Cairo, EG;
Analog Devices Global, Hamilton, BM;
Abstract
Provided herein are apparatus and methods for high linearity voltage variable attenuators (VVAs). In certain configurations, a high linearity VVA includes multiple shunt arms or circuits that operate in parallel with one another between a signal node and a first DC voltage, such as ground. Thus, the shunt arms are in shunt with respect to a signal path of the VVA. The multiple shunt arms include a first shunt arm of one or more n-type field effect transistor (NFETs) and a second shunt arm of one or more p-type field effect transistor (PFETs). The gates of the NFETs are controlled using a control voltage, and the gates of the PFETs are controlled using a complementary control voltage that changes inversely with respect to the control voltage.